Van Der Waals Heterostructures Research Articles

Janus PtSSe-based van der Waals heterostructures for direct Z-scheme photocatalytic water splitting

The semiconductor photocatalysts based on van der Waals heterostructures (vdWHs) and direct Z-scheme mechanism are viable candidates for water splitting using sunlight. In this study, we exploit the combined effects of the inherent dipole in a Janus PtSSe monolayer and the intrinsic electric field present at the interface of Janus PtSSe-based vdWHs for water splitting. These vdWHs exhibit type-II band edge position, narrow band gap and intrinsic electric fields, establishing them as prototypical direct Z-scheme systems. Remarkably, the density functional theory-based results find the potential drop of ∼0.2–3.2 eV across the interface of vdWHs, promoting the interlayer photogenerated carrier's recombination while suppressing the intralayer charge transfer, which leads to a direct Z-scheme charge transfer pathway with robust redox capabilities. In conjunction with redox reactions, the built-in electric field at the interface generates sufficient driving force for the photogenerated carrier's separation. Also, these Janus PtSSe-based vdWHs possess exceptional abilities in capturing visible light with high solar-to-hydrogen (STH) conversion efficiency. The results obtained from this study are important to designing efficient direct Z-scheme photocatalysts for splitting water under sunlight and offer valuable insights for potential commercial implementations.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Band Alignment Transition and Enhanced Performance in Vertical SnS2/MoS2 van der Waals Photodetectors.

The strong light-matter interaction and naturally passivated surfaces of van der Waals materials make heterojunctions of such materials ideal candidates for high-performance photodetectors. In this study, we fabricated SnS2/MoS2 van der Waals heterojunctions and investigated their photoelectric properties. Using an applied gate voltage, we can effectively alter the band arrangement and achieve a transition in type II and type I junctions. It is found that the SnS2/MoS2 van der Waals heterostructures are type II heterojunctions when the gate voltage is above -25 V. Below this gate voltage, the heterojunctions become type I. Photoelectric measurements under various wavelengths of incident light reveal enhanced sensitivity in the ultraviolet region and a broadband sensing range from 400 to 800 nm. Moreover, due to the transition from type II to type I band alignment, the measured photocurrent saturates at a specific gate voltage, and this value depends crucially on the bias voltage and light wavelength, providing a potential avenue for designing compact spectrometers.

Optically driven plasmons in graphene/hBN van der Waals heterostructures: simulating s-SNOM measurements

Abstract Converting transverse photons into longitudinal two-dimensional plasmon-–polaritons (2D-PP) and vice versa presents a significant challenge within the fields of photonics and plasmonics. Therefore, understanding the mechanism which increases the photon – 2D-PP conversion efficiency could significantly contribute to those efforts. In this study, we theoretically examine how efficiently incident radiation, when scattered by a silver spherical nanoparticle (Ag-NP), can be transformed into 2D-PP within van der Waals (vdW) heterostructures composed of hexagonal boron nitride and graphene (hBN/Gr composites). We show that the Dirac plasmon (DP) excitation efficiency depends on the Ag-NP radius as R 3, and decreases exponentially with Ag-NP height h, so that for a certain Ag-NP geometry up to 25 % of the incident electrical field is channeled into the DP. We demonstrate that the linear plasmons (LPs) excitation efficiency can be manipulated by changing the graphene–graphene distance Δ (or hBN thickness) or by changing the number of graphene layers N. By increasing Δ and/or N the LPs move towards smaller wave vectors Q and become accessible by the Ag-NP dipole field, so that for N ≥ 5 the excitation of more than one LP is possible. These results are supported by recent scattering-type scanning near-field optical microscopy (s-SNOM) measurements. Furthermore, we show that Ag-NPs with specific parameters preferentially hybridizes with DPs of a particular wavelength λ D , facilitating selective excitation of DPs. The obtained tuning possibilities could have a significant impact on applied plasmonics, photonics or optoelectronics.

Magnetic proximity effect on the spin-valley coupling in two-dimensional Cr2Ge2Te6/2H-TMD van der Waals heterostructures

Two-dimensional (2D) transition metal dichalcogenides with 2H-phases, as a unique platform of valleytronics, display valley polarization and the well-known anomalous valley Hall effect when stacking with 2D magnetic substrates. In this study, we employ first-principles calculations to investigate the magnetic states, band structures, and magnetic proximity-dependent valley properties of 2D van der Waals heterostructures Cr2Ge2Te6/2H-MX2 (M = Mo, W, and X = S, Se, Te). Our findings reveal that the heterostructures possess stacking-dependent spontaneous valley polarization as well as pristine perpendicular magnetic anisotropy. Additionally, the Berry curvature and circular polarization demonstrate the presence of spin–momentum coupling characteristics, while the calculated non-zero Hall voltage indicates that the anomalous valley Hall effect can be achieved in valley-polarized systems. Furthermore, due to the strain effect and the electronic polarization at the interface, Cr2Ge2Te6/2H-MX2 heterostructures undergo the transition from semiconductors to semimetals upon substitution of early chalcogen elements. These calculations provide valuable insights for practical applications of valleytronics in 2D van der Waals heterostructure systems.

Controllable Synthesis of Transferable Ultrathin Bi2Ge(Si)O5 Dielectric Alloys with Composition-Tunable High-κ Properties.

Two-dimensional (2D) alloys hold great promise to serve as important components of 2D transistors, since their properties allow continuous regulation by varying their compositions. However, previous studies are mainly limited to the metallic/semiconducting ones as contact/channel materials, but very few are related to the insulating dielectrics. Here, we use a facile one-step chemical vapor deposition (CVD) method to synthesize ultrathin Bi2SixGe1-xO5 dielectric alloys, whose composition is tunable over the full range of x just by changing the relative ratios of the GeO2/SiO2 precursors. Moreover, their dielectric properties are highly composition-tunable, showing a record-high dielectric constant of >40 among CVD-grown 2D insulators. The vertically grown nature of Bi2GeO5 and Bi2SixGe1-xO5 enables polymer-free transfer and subsequent clean van der Waals integration as the high-κ encapsulation layer to enhance the mobility of 2D semiconductors. Besides, the MoS2 transistors using Bi2SixGe1-xO5 alloy as gate dielectrics exhibit a large Ion/Ioff (>108), ideal subthreshold swing of ∼61 mV/decade, and a small gate hysteresis (∼5 mV). Our work not only gives very few examples on controlled CVD growth of insulating dielectric alloys but also expands the family of 2D single-crystalline high-κ dielectrics.

Recent Experimental Breakthroughs on 2D Transistors: Approaching the Theoretical Limit

AbstractSince Si‐based Moore's law is physically limited, 2D semiconductors are proposed as successors to continue shrinking the transistor size for more Moore electronics. However, limited by experimental technology bottlenecks, the theoretical predicted superiorities of the 2D transistors over the state‐of‐the‐art Si transistors have been lacking concrete evidence for a decade. In this review, recent exciting experimental breakthroughs for 2D transistors are presented, including gate length miniaturization to a sub‐1 nm limit, electrode contact optimization to the resistance quantum limit, high‐quality dielectric fabrication with an equivalent oxide thickness to sub‐0.5 nm, novel architecture form (2D fin field‐effect transistor), and back‐end‐of‐line integration of directly grown 2D materials on Si complementary metal‐oxide‐semiconductor circuits. Remarkably, an ultrashort channel, Ohmic contact, ballistic transport, and ultrathin dielectric layer are simultaneously satisfied in the 2D InSe transistor, and device performances approaching the theoretical limit are observed. The measured key figures of merit of the ideal 2D InSe transistor are comparable to or even surpass those of the Si transistors. Finally, the challenges and outlook on more Moore electronics based on 2D transistors are highlighted.

Coupled exciton internal and center-of-mass motions in two-dimensional semiconductors by a periodic electrostatic potential

Coupled exciton internal and center-of-mass motions in two-dimensional semiconductors by a periodic electrostatic potential

Charge-transfer hyperbolic polaritons in α-MoO3/graphene heterostructures

Charge transfer is a fundamental interface process that can be harnessed for light detection, photovoltaics, and photosynthesis. Recently, charge transfer was exploited in nanophotonics to alter plasmon polaritons by involving additional non-polaritonic materials to activate the charge transfer. Yet, direct charge transfer between polaritonic materials has not been demonstrated. We report the direct charge transfer in pure polaritonic van der Waals (vdW) heterostructures of α-MoO3/graphene. We extracted the Fermi energy of 0.6 eV for graphene by infrared nano-imaging of charge transfer hyperbolic polaritons in the vdW heterostructure. This unusually high Fermi energy is attributed to the charge transfer between graphene and α-MoO3. Moreover, we have observed charge transfer hyperbolic polaritons in multiple energy–momentum dispersion branches with a wavelength elongation of up to 150%. With the support from the density functional theory calculation, we find that the charge transfer between graphene and α-MoO3, absent in mechanically assembled vdW heterostructures, is attributed to the relatively pristine heterointerface preserved in the epitaxially grown vdW heterostructure. The direct charge transfer and charge transfer hyperbolic polaritons demonstrated in our work hold great promise for developing nano-optical circuits, computational devices, communication systems, and light and energy manipulation devices.

Vacancy Engineering in 2D Transition Metal Chalcogenide Photocatalyst: Structure Modulation, Function and Synergy Application.

Transition metal chalcogenides (TMCs) are widely used in photocatalytic fields such as hydrogen evolution, nitrogen fixation, and pollutant degradation due to their suitable bandgaps, tunable electronic and optical properties, and strong reducing ability. The unique 2D malleability structure provides a pre-designed platform for customizable structures. The introduction of vacancy engineering makes up for the shortcomings of photocorrosion and limited light response and provides the greatest support for TMCs in terms of kinetics and thermodynamics in photocatalysis. This work reviews the effect of vacancy engineering on photocatalytic performance based on 2D semiconductor TMCs. The characteristics of vacancy introduction strategies are summarized, and the development of photocatalysis of vacancy engineering TMCs materials in energy conversion, degradation, and biological applications is reviewed. The contribution of vacancies in the optical range and charge transfer kinetics is also discussed from the perspective of structure manipulation. Vacancy engineering not only controls and optimizes the structure of the TMCs, but also improves the optical properties, charge transfer, and surface properties. The synergies between TMCs vacancy engineering and atomic doping, other vacancies, and heterojunction composite techniques are discussed in detail, followed by a summary of current trends and potential for expansion.

Transport Property Evolution in 2H‐MoTe2−x Mediated by Te‐Deficiency‐Induced Mirror Twin Boundary Networks

The 2H‐MoTe2 is a well‐known layered 2D semiconductor that is considered as a promising material for next‐generation microelectronic and optoelectronic devices. Te‐deficiency‐induced defective structures, like Te vacancy and mirror twin boundary (MTB), would be generated at elevated temperatures. However, the temperature‐dependent evolution of such defects and their influence on the macroscopic electrical transport property of 2H‐MoTe2 is unclear. Herein, the semiconductor–metal transition phenomenon in 2H‐MoTe2−x mediated by the evolving disordered MTB network with increasing Te deficiency is reported on. The samples are grown by molecular beam epitaxy, while the Te deficiency is tuned by post‐growth flash annealing in ultra‐high vacuum. Low‐temperature scanning tunneling microscope investigation discloses the medium‐range disorder evolution of the MTB network incorporated in the 2H‐MoTe2, which eventually transforms to an ordered metallic Mo5Te8 metastable phase. The scanning tunneling spectroscopy shows rich in‐gap states localized at the MTBs, which provide a conducting channel in the semiconductor. The ultra‐high vacuum in situ transport measurement shows a gradual decrease of resistance of the sample upon flash annealing from 50 to 480 °C, confirming the influence of Te deficiency on the transport property, which would play an essential role in the device performance and durability.

Stark Effects of Rydberg Excitons in a Monolayer WSe2 P-N Junction.

The enhanced Coulomb interaction in two-dimensional semiconductors leads to tightly bound electron-hole pairs known as excitons. The large binding energy of excitons enables the formation of Rydberg excitons with high principal quantum numbers (n), analogous to Rydberg atoms. Rydberg excitons possess strong interactions among themselves as well as sensitive responses to external stimuli. Here, we probe Rydberg exciton resonances through photocurrent spectroscopy in a monolayer WSe2 p-n junction formed by a split-gate geometry. We show that an external in-plane electric field not only induces a large Stark shift of Rydberg excitons up to quantum principal number 3 but also mixes different orbitals and brightens otherwise dark states such as 3p and 3d. Our study provides an exciting platform for engineering Rydberg excitons for new quantum states and quantum sensing.

Room-temperature quantum emission from interface excitons in mixed-dimensional heterostructures

The development of van der Waals heterostructures has introduced unconventional phenomena that emerge at atomically precise interfaces. For example, interlayer excitons in two-dimensional transition metal dichalcogenides show intriguing optical properties at low temperatures. Here we report on room-temperature observation of interface excitons in mixed-dimensional heterostructures consisting of two-dimensional tungsten diselenide and one-dimensional carbon nanotubes. Bright emission peaks originating from the interface are identified, spanning a broad energy range within the telecommunication wavelengths. The effect of band alignment is investigated by systematically varying the nanotube bandgap, and we assign the new peaks to interface excitons as they only appear in type-II heterostructures. Room-temperature localization of low-energy interface excitons is indicated by extended lifetimes as well as small excitation saturation powers, and photon correlation measurements confirm antibunching. With mixed-dimensional van der Waals heterostructures where band alignment can be engineered, new opportunities for quantum photonics are envisioned.

Cathodoluminescence emission and electron energy loss absorption from a 2D transition metal dichalcogenide in van der Waals heterostructures.

Nanoscale variations of optical properties in transition metal dichalcogenide (TMD) monolayers can be explored with cathodoluminescence (CL) and electron energy loss spectroscopy (EELS) using electron microscopes. To increase the CL emission intensity from TMD monolayers, the MoSe2flakes are encapsulated in hexagonal boron nitride (hBN), creating van der Waals (VdW) heterostructures. Until now, the studies have been exclusively focused on scanning transmission electron microscopy (STEM-CL) or scanning electron microscopy (SEM-CL), separately. Here, we present results, using both techniques on the same sample, thereby exploring a large acceleration voltage range.
We correlate the CL measurements with STEM-EELS measurements acquired with different energy dispersions, to access both the low-loss region at ultra-high spectral resolution, and the core-loss region. This provides information about the weight of the various absorption phenomena including the direct TMD absorption, the hBN interband transitions, the hBN bulk plasmon, and the core losses of the atoms present in the heterostructure. The S(T)EM-CL measurements from the TMD monolayer only show emission from the A exciton. Combining the STEM-EELS and S(T)EM-CL measurements, we can reconstruct different decay pathways leading to the A exciton CL emission. The comparison with SEM-CL shows that this is also a good technique for TMD heterostructure characterization, where the reduced demands on sample preparation are appealing. To demonstrate the capabilities of SEM-CL imaging, we also measured on a SiO2/Si substrate, quintessential in the sample preparation of two-dimensional materials, which is electron-opaque and can only be measured in SEM-CL. The CL-emitting defects of SiO2make this substrate challenging to use, but we demonstrate that this background can be suppressed by using lower electron energy.

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures.

The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS2vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS2vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS2vdW heterostructure still maintains perpendicular magnetic anisotropy under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS2/GaN/VS2vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS2and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.&#xD.

Vertical Cross-Alignments of 2D Semiconductors with Steered Internal Electric Field for Urea Electrooxidation via Balancing Intermediates Adsorption.

Single-component electrocatalysts generally lead to unbalanced adsorption of OH- and urea during urea oxidation reaction (UOR), thus obtaining low activity and selectivity especially when oxygen evolution reaction (OER) competes at high potentials (>1.5 V). Herein, a cross-alignment strategy of in situ vertically growing Ni(OH)2 nanosheets on 2D semiconductor g-C3N4 is reported to form a hetero-structured electrocatalyst. Various spectroscopy measurements including in situ experiments indicate the existence of enhanced internal electric field at the interfaces of vertical Ni(OH)2 and g-C3N4 nanosheets, favorable for balancing adsorption of reaction intermediates. This heterojunction electrocatalyst shows high-selectivity UOR compared to pure Ni(OH)2, even at high potentials (>1.5 V) and large current density. The computational results show the vertical heterojunction could steer the internal electric field to increase the adsorption of urea, thus efficiently avoiding poisoning of strongly adsorbed OH- on active sites. A membrane electrode assembly (MEA)-based electrolyzer with the heterojunction anode could operate at an industrial-level current density of 200 mA cm-2. This work paves an avenue for designing high-performance electrocatalysts by vertical cross-alignments of active components.

Hidden symmetry of Bogoliubov de Gennes quasi-particle eigenstates and universal relations in flat band superconducting bipartite lattices

Unconventional flat band (FB) superconductivity, as observed in van der Waals heterostructures, could open promising avenues towards high-T_cc materials. In FBs, pairings and superfluid weight scale linearly with the interaction parameter, such an unusual behaviour justifies and encourages strategies to promote FB engineering. Bipartite lattices (BLs) which naturally host FBs could be particularly interesting candidates. Within Bogoliubov de Gennes theory and in the framework of the attractive Hubbard model in BLs, a hidden symmetry of the quasi-particle eigenstates is revealed. As a consequence, we demonstrate universal relations for the pairings and the superfluid weight that are independent of the characteristics of the hopping term. Remarkably, it is shown that these general properties are insensitive to disorder as long as the bipartite character is protected.

Graphene Oxide‐Assisted Molecular Crystal Co‐Assembly for Large‐Scale Freestanding 2D Photoresponse Heterostructures with Synaptic Plasticity

Abstract2D van der Waals heterostructures (2D vdWHs) have been gaining significant attention in neuromorphic electronics. However, the facile synthesis of large‐scale, high‐quality freestanding 2D vdWHs remains challenge, particularly for organic counterparts due to susceptible nucleation behaviors and weak intermolecular interactions. Here, the study reports a graphene oxide (GO)‐assisted molecular crystal co‐assembly method for one‐step growth of centimeter‐scale freestanding heterostructures. This co‐assembly involves the simultaneous assembling of organic and GO precursors at the liquid–liquid interface, where the amphiphilic nature of GO nanosheets facilitates the diffusion of organic molecules and 2D nucleation of organic crystals, and the nanosheets also become enriched to grow a quasi‐solid film for the bilayer formation. Owing to integrated photosensitive and charge‐trapping properties as well as type II band structure, this heterostructure exhibits exceptional photonic synaptic behaviors, with a paired‐pulse facilitation index of 141% and image recognition of 91%.

One-Dimensional MoS2 Nanoscrolls as Miniaturized Memories.

Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS2), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS2 nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼104 and a retention time exceeding 103 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.

Mixed-Dimensional van der Waals Heterostructure (2D ReS2/0D MoS2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector.

The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.